sot-89 -3l plastic-encapsulate transistors KTC3205 transistor (npn) features z high current application z complementary to kta1273 maximum ratings ( t a =25 unless otherwise noted ) symbol parameter value unit v cbo collector-base voltage 30 v v ceo collector-emitter voltage 30 v v ebo emitter-base voltage 5 v i c collector current -continuous 2 a p c collector dissipation 0.5 w t j , t stg junction and storage temperature -55 ~ 150 electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions m in t yp m ax unit collector-base breakdown voltage v (br) cbo i c = 1ma , i e =0 30 v collector-emitter breakdown voltage v (br) ceo i c = 10ma, i b =0 30 v emitter-base breakdown voltage v (br) ebo i e = 1ma, i c =0 5 v collector cut-off current i cbo v cb = 30v, i e =0 0.1 a emitter cut-off current i ebo v eb = 5v, i c =0 0.1 a dc current gain h fe v ce = 2 v, i c = 500 ma 100 320 collector-emitter saturation voltage v ce (sat) i c = 1.5a, i b = 30 ma 2.0 v base-emitter voltage v be v ce =2v, i c = 500ma 1.0 v transition frequency f t v ce =2v, i c = 500ma 120 mhz collector output capacitance c ob v cb =10v, i e =0v,f=1mh z 13 pf classification of h fe rank o y range 100-200 160-320 1 2 3 sot-89 -3l 1. base 2. collector 3. emitter 1 of 1 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification a,jun,2011
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